AGH University of Krakow
A thin film of a topological insulator sandwiched between two layers of ferromagnetic insulator is considered. In such a system, the effect of magnetic proximity affects topological surface states. Each layer is characterized by magnetization directed along the $z$--axis. The magnetization of adjacent ferromagnets can be changed in two ways, either by applying an external magnetic field or by changing the thickness of the thin film of the topological insulator.
We used the Green function formalism to determine the anomalous Hall conductivity and spin polarization. From this, we find that by changing the system parameters (i.e., magnetic configuration, gate voltage, hybridization) one can control the system conductivity. Also, we find the topological phase transition between the trivial insulator and the topological insulator with a quantized anomalous Hall effect for chemical potential inside the energy gap.