National High Magnetic Filed Laboratory
A. V. Suslov$^{1,*}$, I. L. Drichko$^2$, I. Yu. Smirnov$^2$, K. W. Baldwin$^3$, L. N. Pfeiffer$^4$, K. W. West$^4$
$^1$National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
$^2$Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
$^3$Princeton Materials Institute, Princeton University, Princeton, New Jersey 08544, USA
$^4$Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
*corresponding author: @email
We investigated the ac conductivity of a 17 nm wide single p-GaAs/AlGaAs quantum well with a hole concentration of 1.2$\cdot$10$^{11}$ cm$^{−2}$ and mobility of 1.8$\cdot$10$^{6}$ cm$^{2}$/Vs. We used a surface acoustic wave technique and evaluated the complex ac conductivity $σ_{ac}=σ_1 - iσ_2$ of the 2D structure at waves frequencies from 30 MHz to 300 MHz, and temperatures from 20 mK to 300 mK in a magnetic field of up to 18 T.
At a low magnetic field B < 2 T, conductance oscillations undergo beating induced by spin-orbit interaction. The quantum well profile, as well as the small magnitude of the spin-orbit interaction, allowed us to conclude that the spin-orbit splitting is governed by the Dresselhaus mechanism.